bc807 -16w, -25w, -40w -500 ma, -50 v pnp plastic encapsulate transistor elektronische bauelemente 28-jul-2010 rev. f page 1 of 3 ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? ideally suited for automatic insertion ? epitaxial planar die construction ? complementary to bc817w package information weight: 0.0074 g (approximately) marking bc807- 16 w: 5 a bc807- 25 w: 5 b bc807- 40 w: 5 c, yl absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo -50 v collector to emitter voltage v ceo -45 v emitter to base voltage v ebo -5 v collector current i c -500 ma collector power dissipation p c 200 mw junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. max. unit test conditions bv cbo -50 - v i c = -10 ua, i e = 0 bv ceo -45 - v i c = -10 ma, i b = 0 bv ebo -5 - v i e = -1 ua, i c = 0 i cbo - -0.1 ua v cb = -20v, i e = 0 i ceo - -0.2 ua v ce = -20v, i b = 0 i ebo - -0.1 ua v eb = -5v, i c = 0 v ce(sat) - -0.7 v i c = -500ma, i b = -50 ma v be(on) - -1.2 v v ce = -1 v, i c = -500 ma h fe(1) 807-16w 807-25w 807-40w 100 160 250 250 400 600 v ce = -1 v, i c = -100 ma h fe(2) 40 - v ce = -1 v, i c = -500 ma ft 80 - mhz v ce = -5 v, i c = -10 ma, f = 100mhz c ob - 10 pf v cb = -10v, f=1mhz top view a l c b d g h j f k e 1 2 3 1 2 3 sot-323 ref. millimete r ref. millimete r min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
bc807 -16w, -25w, -40w -500 ma, -50 v pnp plastic encapsulate transistor elektronische bauelemente 28-jul-2010 rev. f page 2 of 3 characteristic curves
bc807 -16w, -25w, -40w -500 ma, -50 v pnp plastic encapsulate transistor elektronische bauelemente 28-jul-2010 rev. f page 3 of 3 characteristic curves
|
